Designs › Amplifier stages › Followers

Source follower

A voltage buffer whose output follows the input at a lower voltage. The bias current sets its operating point, while the body connection changes its gain and voltage shift. Compare the two body connections to see why practical followers fall short of unity gain.

How it works

The bias sink keeps M1's current approximately constant, so its source tracks its gate one V_GS lower. With the bulk grounded, the rising source voltage raises the threshold through body effect. Both transistors' finite output resistances also reduce the gain.

Mb copies I_bias (20 µA by default) from Mr and so fixes M1's current; the output sits V_GS1 below the input, and V_GS1 grows with the output when the bulk is grounded. The ground port returns the bias reference and sink; it is also the input device's default bulk connection.

Signal path

  • Follower (M1): Drain on vdd, gate on in, source on out: with its current fixed, its V_GS barely changes, so the source follows the gate one V_GS lower.
  • Bias sink (Mr, Mb): Mr, diode-connected, takes the testbench's I_bias; Mb copies it from out to ground as the follower's current.

Key relations

  • Small-signal gain: A_v ≈ g_m1 / (g_m1 + g_mb1 + 1/r_o1 + 1/r_ob). below one by construction; with the bulk on its source g_mb1 drops out. The bench checks gain below 0 dB at its stated 1.0 V input point; the rest of the transfer remains visible in the sweep.
  • Level shift: V_in − V_out = V_GS1 = V_TH(V_SB) + V_ov. with the bulk grounded V_SB = V_out, so the threshold, and the shift, rise with the output
  • Body effect: η = g_mb1/g_m1 = γ / (2 √(2φ_F + V_SB)). the body's share of the transconductance; it shrinks slowly as V_SB rises
  • Output resistance: R_out ≈ 1 / (g_m1 + g_mb1). low, which is what a buffer is for; the sink's r_o sits in parallel
  • Output floor: V_out > V_ov(Mb). below it Mb leaves saturation and stops copying I_bias

Trade-offs

  • Bulk connection: to source removes the body effect, lifting the gain towards one and flattening the shift, but needs an isolated p-well for M1.
  • I_bias: more current raises g_m1 and lowers R_out, but increases V_ov, so the level shift grows and the output cannot go as low.
  • W: wider lowers M1's V_ov and so the level shift, and raises g_m1, at the cost of input capacitance.
  • L_sink: longer raises the sink's output resistance, keeping its current steadier as the output moves, but raises its V_ov at the same W_sink.

Testbenches and limits

  • DC transfer
BenchFigureLimit
DC transferGain at V_in = 1.0 V≤ 0 dB

Design variables and defaults

VariableDefault
W20 µm
L500 nm
I_bias20 µA
W_sink10 µm
L_sink1 µm
Bulk connectiongnd

Ports

  • in input
  • out output
  • bn bias
  • vdd supply
  • 0 ground: bias-sink/reference return and the default NMOS substrate connection

Reference

B. Razavi, Design of Analog CMOS Integrated Circuits, 2nd ed., McGraw-Hill, 2017. Single-Stage Amplifiers - the source follower, and the body effect's contribution to its gain.

The source-follower topology and its small-signal gain. Body transconductance and the output conductances of both the follower and its bias sink reduce the gain; the bulk-connection option isolates the body-effect contribution.

IHP SG13G2 130 nm. Simulations run in your browser; open the workbench to run this design's benches and change its variables.